Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received much attention due to their technological potential in terms of scalability, high-speed, and low-power operation. Unfortunately, however, HfO2-FeFETs also suffer from persistent reliability challenges, specifically affecting retention, endurance, variability. A deep understanding the physics is an essential prerequisite for successful commercialization this promising technology. In article, we review literature about relevant aspects HfO2-FeFETs. We initially focus ferroelectric capacitors, as a prelude comprehensive analysis FeFET reliability. Then, interpret key metrics at device level (i.e., variability) physical mechanisms previously identified. Finally, discuss implications device-level both circuit system levels. Our integrative approach connects apparently unrelated issues suggests mitigation strategies device, circuit, or level. conclude article by proposing set research opportunities guide future development field.